? semiconductor components industries, llc, 2001 may, 2001 rev. 4 1 publication order number: 1pmt5.0at3/d 1pmt5.0at3 series zener transient voltage suppressor powermite ? package the 1pmt5.0at3 series is designed to protect voltage sensitive components from high voltage, high energy transients. excellent clamping capability, high surge capability, low zener impedance and fast response time. the advanced packaging technique provides for a highly efficient micro miniature, space saving surface mount with its unique heat sink design. the powermite has the same thermal performance as the sma while being 50% smaller in footprint area, and delivering one of the lowest height profiles (1.1 mm) in the industry. because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. specification features: ? standoff voltage: 5 58 volts ? peak power 175 watts @ 1 ms ? maximum clamp voltage @ peak pulse current ? low leakage ? response time is typically < 1 ns ? esd rating of class 3 (> 16 kv) per human body model ? low profile maximum height of 1.1 mm ? integral heat sink/locking tabs ? full metallic bottom eliminates flux entrapment ? small footprint footprint area of 8.45 mm 2 ? supplied in 12 mm tape and reel 12,000 units per reel ? powermite is jedec registered as do216aa ? cathode indicated by polarity band mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable mounting position: any maximum case temperature for soldering purposes: 260 c for 10 seconds plastic surface mount zener overvoltage transient suppressor 5 58 volts 175 watt peak power device package shipping ordering information 1pmtxxat3 powermite 12,000/tape & reel powermite case 457 plastic http://onsemi.com 12 1: cathode 2: anode 1 2 lead orientation in tape: cathode (short) lead to sprocket holes mxx = specific device code xx = 5 58 = (see table next page) d = date code marking diagram mxx d 1 cathode 2 anode
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1pmt5.0at3 series http://onsemi.com 2 maximum ratings rating symbol value unit maximum p pk dissipation @ t a = 25 c, (pw10/1000 s) (note 1.) p pk 175 w maximum p pk dissipation @ t a = 25 c, (pw8/20 s) (note 1.) p pk 1000 w dc power dissipation @ t a = 25 c (note 2.) derate above 25 c thermal resistance from junction to ambient p d r q ja 500 4.0 248 mw mw/ c c/w thermal resistance from junction to lead (anode) r q janode 35 c/w maximum dc power dissipation (note 3.) thermal resistance from junction to tab (cathode) p d r q jcathode 3.2 23 w c/w operating and storage temperature range t j , t stg 55 to +150 c 1. nonrepetitive current pulse at t a = 25 c. 2. mounted with recommended minimum pad size, dc board fr4. 3. at tab (cathode) temperature, t tab = 75 c electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 4.) = 35 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.25 volts @ 200 ma) v rwm v br @ i t (v) (note 6.) i t i r @ v rwm v c @ i pp i pp (a) device marking (note 5.) min nom max (ma) ( a) (v) (note 7.) 1pmt5.0at3 mke 5.0 6.4 6.7 7.0 10 800 9.2 19 1pmt7.0at3 mkm 7.0 7.78 8.2 8.6 10 500 12 14.6 1pmt12at3 mle 12 13.3 14.0 14.7 1.0 5.0 19.9 8.8 1pmt16at3 mlp 16 17.8 18.75 19.7 1.0 5.0 26 7.0 1pmt18at3 mlt 18 20.0 21.0 22.1 1.0 5.0 29.2 6.0 1pmt22at3 mlx 22 24.4 25.6 26.9 1.0 5.0 35.5 4.9 1pmt24at3 mlz 24 26.7 28.1 29.5 1.0 5.0 38.9 4.5 1pmt26at3 mme 26 28.9 30.4 31.9 1.0 5.0 42.1 4.2 1pmt28at3 mmg 28 31.1 32.8 34.4 1.0 5.0 45.4 3.9 1pmt30at3 mmk 30 33.3 35.1 36.8 1.0 5.0 48.4 3.6 1pmt33at3 mmm 33 36.7 38.7 40.6 1.0 5.0 53.3 3.3 1pmt36at3 mmp 36 40.0 42.1 44.2 1.0 5.0 58.1 3.0 1pmt40at3 mmr 40 44.4 46.8 49.1 1.0 5.0 64.5 2.7 1pmt48at3 mmx 48 53.3 56.1 58.9 1.0 5.0 77.4 2.3 1pmt51at3 mmz 51 56.7 59.7 62.7 1.0 5.0 82.4 2.1 1pmt58at3 mng 58 64.4 67.8 71.2 1.0 5.0 93.6 1.9 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. 5. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ) which should be equal to or greater than the dc or continuous peak operating voltage level. 6. v br measured at pulse test current i t at ambient temperature of 25 c. 7. surge current waveform per figure 2 and derate per figure 4.
1pmt5.0at3 series http://onsemi.com 3 p , peak power (watts) p t p , pulse width ( s) 100 1000 10,000 1.0 10 100 10 01234 0 50 100 t, time (ms) value (%) half value - i rsm 2 peak value - i rsm t r t r 10 m s typical protection circuit v in v l z in load peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i rsm . figure 1. pulse rating curve figure 2. 10 x 1000 s pulse waveform 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s figure 3. 8 x 20 s pulse waveform 1000 10,000 figure 4. pulse derating curve
1pmt5.0at3 series http://onsemi.com 4 figure 5. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms figure 6. steady state power derating 1.2 1.0 0.8 0.6 0.4 0.2 0 55 25 85 150 t, temperature ( c) v , typical forward voltage (volts) f figure 7. forward voltage 25 50 75 100 125 175 3.5 2.5 2 1.5 1 0 t, temperature ( c) p , maximum power dissipation (w) d 0.5 t l 150 3 10,000 1000 100 10 1 10 100 working peak reverse voltage (volts) c, capacitance (pf) figure 8. capacitance versus working peak reverse voltage measured @ 50% v rwm measured @ zero bias
1pmt5.0at3 series http://onsemi.com 5 typical solder heating profile for any given circuit board, there will be a group of control settings that will give the desired heat pattern. the operator must set temperatures for several heating zones and a figure for belt speed. taken together, these control settings make up a heating aprofileo for that particular circuit board. on machines controlled by a computer, the computer remembers these profiles from one operating session to the next. figure 9 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. this profile will vary among soldering systems, but it is a good starting point. factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. this profile shows temperature versus time. the line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. the two profiles are based on a high density and a low density board. the vitronics smd310 convection/infrared reflow soldering system was used to generate this profile. the type of solder used was 62/36/2 tin lead silver with a melting point between 177189 c. when this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. the components on the board are then heated by conduction. the circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. step 1 preheat zone 1 ramp" step 2 vent soak" step 3 heating zones 2 & 5 ramp" step 4 heating zones 3 & 6 soak" step 5 heating zones 4 & 7 spike" step 6 vent step 7 cooling 200 c 150 c 100 c 50 c time (3 to 7 minutes total) t max solder is liquid for 40 to 80 seconds (depending on mass of assembly) 205 to 219 c peak at solder joint desired curve for low mass assemblies 100 c 150 c 160 c 170 c 140 c figure 9. typical solder heating profile desired curve for high mass assemblies
1pmt5.0at3 series http://onsemi.com 6 information for using the powermite surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. powermite 0.100 2.54 0.025 0.635 0.050 1.27 0.105 2.67 0.030 0.762 inches mm powermite power dissipation the power dissipation of the powermite is a function of the drain pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the powermite package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 504 milliwatts. p d = 150 c 25 c = 504 milliwatts 248 c/w the 248 c/w for the powermite package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 504 milliwatts. there are other alternatives to achieving higher power dissipation from the powermite package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
1pmt5.0at3 series http://onsemi.com 7 outline dimensions 175 watt peak power transient voltage suppressor surface mounted dim min max min max inches millimeters a 1.75 2.05 0.069 0.081 b 1.75 2.18 0.069 0.086 c 0.85 1.15 0.033 0.045 d 0.40 0.69 0.016 0.027 f 0.70 1.00 0.028 0.039 h -0.05 +0.10 -0.002 +0.004 j 0.10 0.25 0.004 0.010 k 3.60 3.90 0.142 0.154 l 0.50 0.80 0.020 0.031 r 1.20 1.50 0.047 0.059 s notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 (0.006) per side. s b m 0.08 (0.003) c s t a b s j k t h l j c d s b m 0.08 (0.003) c s t f term. 1 term. 2 r 0.50 ref 0.019 ref powermite case 45704 issue d
1pmt5.0at3 series http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 1pmt5.0at3/d powermite is a registered trademark of and used under a license from microsemi corporation. thermal clad is a registered trademark of the bergquist company. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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